| Course Unit Code | Course Unit Title | Type of Course Unit | Year of Study | Semester | Number of ECTS Credits | | EEM-23-123 | MIcroelectronIcs | Elective | 1 | 2 | 6 |
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| Level of Course Unit |
| Second Cycle |
| Objectives of the Course |
| The aim of this course is to provide an understanding of the techniques of production of micro-based electronic devices. |
| Name of Lecturer(s) |
| Dr. Öğr. Üyesi Adem KOCYİĞİT |
| Learning Outcomes |
| 1 | Learn how to make microelectronic devices | | 2 | To understand the mechanisms of production of microelectronic devices | | 3 | be motivated to design new devices | | 4 | To be able to produce solutions to the problems that may be encountered in microelectronics |
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| Mode of Delivery |
| Daytime Class |
| Prerequisites and co-requisities |
| No |
| Recommended Optional Programme Components |
| No |
| Course Contents |
| Production techniques in microelectronic technology and boundaries for IC environment semiconductor technology. Planer technology. Micro-lithography. Thin films; evaporation, dusting and chemical vapor condensation techniques. Thermal oxidation of silicon. Methods of development; diffusion, ion addition and epitaxy. Performing diode, transistor and resistance elements in the circuit. MOS integrated circuit production technology. Fundamentals of VLSI technology. VLSI systems and applications. Electrostatic problem in VLSI technology. |
| Weekly Detailed Course Contents |
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| 1 | Production techniques in microelectronic technology | | | | 2 | Planer Technology | | | | 3 | Micro-lithography | | | | 4 | Thin films; evaporation, dusting and chemical vapor condensation techniques | | | | 5 | Thermal oxidation of silicon | | | | 6 | Methods of development; diffusion, ion addition and epitaxy | | | | 7 | Implementation of diode, transistor and resistance elements | | | | 8 | MIDTERM | | | | 9 | MOS IC production technology | | | | 10 | MOS IC production technology | | | | 11 | Fundamentals of VLSI technology | | | | 12 | Fundamentals of VLSI technology | | | | 13 | Fundamentals of VLSI technology | | | | 14 | Fundamentals of VLSI technology | | | | 15 | Fundamentals of VLSI technology | | | | 16 | Final Exam | | |
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| Recommended or Required Reading |
| Lecture Notes |
| Planned Learning Activities and Teaching Methods |
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| Assessment Methods and Criteria | |
| Midterm Examination | 1 | 100 | | SUM | 100 | |
| Final Examination | 1 | 100 | | SUM | 100 | | Term (or Year) Learning Activities | 50 | | End Of Term (or Year) Learning Activities | 50 | | SUM | 100 |
| | Language of Instruction | | Turkish | | Work Placement(s) | | No |
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| Workload Calculation |
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| Midterm Examination | 1 | 1 | 1 |
| Final Examination | 1 | 2 | 2 |
| Attending Lectures | 14 | 2 | 28 |
| Laboratory | 5 | 2 | 10 |
| Observation | 14 | 1 | 14 |
| Demonstration | 14 | 1 | 14 |
| Field Work | 1 | 10 | 10 |
| Project Presentation | 1 | 1 | 1 |
| Self Study | 14 | 2 | 28 |
| Individual Study for Mid term Examination | 1 | 10 | 10 |
| Individual Study for Final Examination | 1 | 10 | 10 |
| Reading | 14 | 3 | 42 |
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| Contribution of Learning Outcomes to Programme Outcomes |
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| * Contribution Level : 1 Very low 2 Low 3 Medium 4 High 5 Very High |
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Iğdır University, Iğdır / TURKEY • Tel (pbx): +90 476
226 13 14 • e-mail: info@igdir.edu.tr
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